Specification	FDMC8321L

Current - Continuous Drain (Id) @ 25°C	49 A, 22 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	3900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.3 W, 40 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	Power33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC8321LDC Series

N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMC8321L	N-Channel	-55 °C	150 °C	Surface Mount	3 V	20 V	61 nC	8-PowerTDFN	MOSFET (Metal Oxide)	2.5 mOhm	4.5 V 10 V	2.3 W 40 W	3900 pF	40 V	Power33	22 A 49 A
ON Semiconductor FDMC8321LDC	N-Channel	-55 °C	150 °C	Surface Mount	3 V	20 V		8-PowerTDFN	MOSFET (Metal Oxide)	2.5 mOhm	4.5 V 10 V	2.9 W 56 W	3965 pF	40 V	Dual Cool ™ 33	27 A 108 A	60 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.20
		10	$ 2.08
		100	$ 1.45
		500	$ 1.18
		1000	$ 1.09
	Digi-Reel®	1	$ 3.20
		10	$ 2.08
		100	$ 1.45
		500	$ 1.18
		1000	$ 1.09
	Tape & Reel (TR)	3000	$ 1.03
Newark	Each (Supplied on Cut Tape)	1	$ 3.26
		1	$ 3.26
		10	$ 2.13
		10	$ 2.13
		25	$ 1.91
		25	$ 1.91
		50	$ 1.71
		50	$ 1.71
		100	$ 1.49
		100	$ 1.49
		250	$ 1.48
		250	$ 1.48
ON Semiconductor	N/A	1	$ 0.46

Description

General part information

FDMC8321LDC Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-483AK-PQFN8 3.3x3.3, 0.65P

Package Drawing