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FDMC3020DC
Discrete Semiconductor Products

FDMC8321LDC

Active
ON Semiconductor

N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 40V, 108A, 2.5MΩ

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FDMC3020DC
Discrete Semiconductor Products

FDMC8321LDC

Active
ON Semiconductor

N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 40V, 108A, 2.5MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC8321LDC
Current - Continuous Drain (Id) @ 25°C108 A, 27 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds3965 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.9 W, 56 W
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device PackageDual Cool ™ 33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.01
10$ 1.96
100$ 1.35
500$ 1.10
1000$ 1.01
Digi-Reel® 1$ 3.01
10$ 1.96
100$ 1.35
500$ 1.10
1000$ 1.01
Tape & Reel (TR) 3000$ 0.95
NewarkEach (Supplied on Full Reel) 3000$ 1.21
6000$ 1.15
12000$ 1.03
18000$ 0.99
30000$ 0.95
ON SemiconductorN/A 1$ 0.60

Description

General part information

FDMC8321LDC Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.

Documents

Technical documentation and resources