Specification	RS1G300GNTB

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	56.8 nC
Input Capacitance (Ciss) (Max) @ Vds	4230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	35 W, 3 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

RS1G Series

Part	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Rohm Semiconductor RS1G201ATTB1	5.2 mOhm	MOSFET (Metal Oxide)	40 V	Surface Mount	8-PowerTDFN	2.5 V	150 °C	-55 °C	6890 pF	130 nC	P-Channel	8-HSOP	20 V	20 A 78 A
Rohm Semiconductor RS1G300GNTB	2.5 mOhm	MOSFET (Metal Oxide)	40 V	Surface Mount	8-PowerTDFN	2.5 V				56.8 nC	N-Channel	8-HSOP	20 V	30 A	150 °C	4.5 V 10 V	4230 pF	3 W 35 W
Rohm Semiconductor RS1G180MNTB		MOSFET (Metal Oxide)	40 V	Surface Mount	8-PowerTDFN	2.5 V			1293 pF	19.5 nC	N-Channel	8-HSOP	20 V	18 A 80 A	150 °C	4.5 V 10 V		3 W 30 W	7 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly