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RS1G201ATTB1

Discrete Semiconductor Products

RS1G201ATTB1

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Rohm Semiconductor

MOSFET, P-CH, 40V, 78A, HSOP ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheet Technical Data Sheet EN +39

RS1G201ATTB1

Discrete Semiconductor Products

RS1G201ATTB1

Active

Rohm Semiconductor

MOSFET, P-CH, 40V, 78A, HSOP ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +39

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RS1G201ATTB1

Current - Continuous Drain (Id) @ 25°C	20 A, 78 A
Drain to Source Voltage (Vdss)	40 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.58
		10	$ 2.34
		100	$ 1.63
		500	$ 1.33
		1000	$ 1.23
	Digi-Reel®	1	$ 3.58
		10	$ 2.34
		100	$ 1.63
		500	$ 1.33
		1000	$ 1.23
	N/A	1589	$ 1.88
	Tape & Reel (TR)	2500	$ 1.15
Newark	Each (Supplied on Cut Tape)	1	$ 1.68

Description

General part information

RS1G Series

P-Channel 40 V 20A (Ta), 78A (Tc) 3W (Ta), 40W (Tc) Surface Mount 8-HSOP

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Notes for Temperature Measurement Using Thermocouples

How to Use LTspice® Models

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

PCB Layout Thermal Design Guide

About Export Regulations

Export Information

HSOP8(TB1) Explanation for Marking

Package Information

Moisture Sensitivity Level - Transistors

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Temperature Measurement Using Forward Voltage of PN Junction

How to Create Symbols for PSpice Models

Notes for Calculating Power Consumption:Static Operation

HSOP8(TB1) Taping Information

Package Information

Inner Structure

Package Information

P-channel Power MOSFETs selection guide

Technical Article

Condition of Soldering / Land Pattern Reference

Package Information

What Is Thermal Design

Part Explanation

Application Note

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

RS1G201AT ESD Data

Characteristics Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

What is a Thermal Model? (Transistor)

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Report of SVHC under REACH Regulation

Environmental Data

Method for Monitoring Switching Waveform

Schematic Design & Verification

Taping Information

Package Information

Two-Resistor Model for Thermal Simulation

HSOP8(TB1) Dimension

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Types and Features of Transistors

Application Note

Basics of Thermal Resistance and Heat Dissipation

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Anti-Whisker formation - Transistors

Package Information

About Flammability of Materials

Environmental Data

Precautions When Measuring the Rear of the Package with a Thermocouple

RS1G Series

Part	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Rohm Semiconductor RS1G201ATTB1	5.2 mOhm	MOSFET (Metal Oxide)	40 V	Surface Mount	8-PowerTDFN	2.5 V	150 °C	-55 °C	6890 pF	130 nC	P-Channel	8-HSOP	20 V	20 A 78 A
Rohm Semiconductor RS1G300GNTB	2.5 mOhm	MOSFET (Metal Oxide)	40 V	Surface Mount	8-PowerTDFN	2.5 V				56.8 nC	N-Channel	8-HSOP	20 V	30 A	150 °C	4.5 V 10 V	4230 pF	3 W 35 W
Rohm Semiconductor RS1G180MNTB		MOSFET (Metal Oxide)	40 V	Surface Mount	8-PowerTDFN	2.5 V			1293 pF	19.5 nC	N-Channel	8-HSOP	20 V	18 A 80 A	150 °C	4.5 V 10 V		3 W 30 W	7 mOhm