Discrete Semiconductor Products

UPA2350T1P-E4-A

Obsolete

NCH DUAL POWER MOSFET 20V 6.0A 35MOHM 4-PIN EFLIP-LGA

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Discrete Semiconductor Products

Obsolete

NCH DUAL POWER MOSFET 20V 6.0A 35MOHM 4-PIN EFLIP-LGA

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2350T1P-E4-A

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs [Max]	8.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	542 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	4-XFBGA
Power - Max [Max]	1.3 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	4-EFLIP-LGA
Supplier Device Package [x]	1.62
Supplier Device Package [y]	1.62
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Configuration	Technology	Current - Continuous Drain (Id) @ 25°C	FET Feature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature	Supplier Device Package [x]	Supplier Device Package [y]
Renesas Electronics Corporation UPA2350T1G-E4-A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	6 A	Logic Level Gate	Surface Mount	8.6 nC	1.3 W	4-FlipChip	1.5 V	35 mOhm	4-FCBGA 4-XBGA	542 pF	20 V
Renesas Electronics Corporation UPA2350T1P-E4-A	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)	6 A	Logic Level Gate 2.5V Drive	Surface Mount	8.6 nC	1.3 W	4-EFLIP-LGA	1.5 V	35 mOhm	4-XFBGA	542 pF	20 V	150 °C	1.62	1.62

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The UPA2350T1G is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources