UPA2350T1G-E4-A

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2350T1G-E4-A

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8.6 nC
Input Capacitance (Ciss) (Max) @ Vds	542 pF
Mounting Type	Surface Mount
Package / Case	4-FCBGA, 4-XBGA
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	4-FlipChip
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case
Renesas Electronics Corporation UPA2350T1G-E4-A	8.6 nC	6 A	MOSFET (Metal Oxide)	Surface Mount	20 V	35 mOhm	Logic Level Gate	542 pF	2 N-Channel (Dual)	4-FlipChip	1.5 V	4-FCBGA 4-XBGA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	417	$ 0.72

General part information

The UPA2350T1G is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources