N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 8.6 nC | 6 A | MOSFET (Metal Oxide) | Surface Mount | 20 V | 35 mOhm | Logic Level Gate | 542 pF | 2 N-Channel (Dual) | 4-FlipChip | 1.5 V | 4-FCBGA 4-XBGA |