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D2PAK
Discrete Semiconductor Products

NTB25P06T4G

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, -27.5 A, -60 V, 70 MOHM, -10 V, -2.8 V ROHS COMPLIANT: YES

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D2PAK
Discrete Semiconductor Products

NTB25P06T4G

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, -27.5 A, -60 V, 70 MOHM, -10 V, -2.8 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTB25P06T4G
Current - Continuous Drain (Id) @ 25°C27.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50 nC
Input Capacitance (Ciss) (Max) @ Vds1680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)120 W
Rds On (Max) @ Id, Vgs82 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)15 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.08
10$ 2.00
100$ 1.38
Digi-Reel® 1$ 3.08
10$ 2.00
100$ 1.38
Tape & Reel (TR) 800$ 1.07
1600$ 1.00
2400$ 0.96
4000$ 0.95
NewarkEach (Supplied on Full Reel) 1$ 1.28
3000$ 1.21
6000$ 1.15
12000$ 1.03
18000$ 0.99
30000$ 0.95
ON SemiconductorN/A 1$ 1.02

Description

General part information

NTB25P06 Series

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.