NTB25P06 Series

Single P-Channel Power MOSFET -60V, -27.5A, 82 mΩ

Catalog

Single P-Channel Power MOSFET -60V, -27.5A, 82 mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type
ON Semiconductor NTB25P06	27.5 A	Surface Mount	82 mOhm	15 V	1680 pF	MOSFET (Metal Oxide)	10 V	50 nC	D2PAK	-55 °C	175 ░C	4 V	120 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	P-Channel
ON Semiconductor NTB25P06T4G	27.5 A	Surface Mount	82 mOhm	15 V	1680 pF	MOSFET (Metal Oxide)	10 V	50 nC	D2PAK	-55 °C	175 ░C	4 V	120 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	P-Channel

Catalog

Single P-Channel Power MOSFET -60V, -27.5A, 82 mΩ

Key Features

• RoHS Compliant

Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.