Discrete Semiconductor Products

NTB25P06

Obsolete

ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

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Discrete Semiconductor Products

NTB25P06

Obsolete

ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTB25P06

Current - Continuous Drain (Id) @ 25°C	27.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	120 W
Rds On (Max) @ Id, Vgs	82 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

NTB25P06 Series

Single P-Channel Power MOSFET -60V, -27.5A, 82 mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type
ON Semiconductor NTB25P06	27.5 A	Surface Mount	82 mOhm	15 V	1680 pF	MOSFET (Metal Oxide)	10 V	50 nC	D2PAK	-55 °C	175 ░C	4 V	120 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	P-Channel
ON Semiconductor NTB25P06T4G	27.5 A	Surface Mount	82 mOhm	15 V	1680 pF	MOSFET (Metal Oxide)	10 V	50 nC	D2PAK	-55 °C	175 ░C	4 V	120 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTB25P06 Series

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Documents

Technical documentation and resources