Discrete Semiconductor Products

SUD19N20-90-T4-E3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 19A TO252

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Discrete Semiconductor Products

SUD19N20-90-T4-E3

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 19A TO252

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SUD19N20-90-T4-E3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W, 3 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

SUD19 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SUD19P06-60-BE3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	2.3 W 38.5 W	3 V	1710 pF	18.3 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19P06-60-GE3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	2.3 W 38.5 W	3 V	1710 pF	18.3 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19N20-90-BE3	51 nC	6 V 10 V	TO-252AA	200 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	3 W 136 W	4 V	1800 pF	19 A	Surface Mount	90 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19P06-60L-E3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	175 ░C	2.7 W 46 W	3 V	1710 pF	19 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19N20-90-T4-E3	51 nC	6 V 10 V	TO-252AA	200 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	3 W 136 W	4 V	1800 pF	19 A	Surface Mount	90 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19N20-90-E3	51 nC	6 V 10 V	TO-252AA	200 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	3 W 136 W	4 V	1800 pF	19 A	Surface Mount	90 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19P06-60-E3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	2.3 W 38.5 W	3 V	1710 pF	18.3 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 1.33
		5000	$ 1.28

Description

General part information

SUD19 Series

N-Channel 200 V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources

No documents available