Discrete Semiconductor Products

SUD19N20-90-BE3

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Vishay General Semiconductor - Diodes Division

POWER MOSFET, N CHANNEL, 200 V, 19 A, 0.075 OHM, TO-252 (DPAK), SURFACE MOUNT

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

SUD19N20-90-BE3

Active

Vishay General Semiconductor - Diodes Division

POWER MOSFET, N CHANNEL, 200 V, 19 A, 0.075 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SUD19N20-90-BE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W, 3 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

SUD19 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SUD19P06-60-BE3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	2.3 W 38.5 W	3 V	1710 pF	18.3 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19P06-60-GE3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	2.3 W 38.5 W	3 V	1710 pF	18.3 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19N20-90-BE3	51 nC	6 V 10 V	TO-252AA	200 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	3 W 136 W	4 V	1800 pF	19 A	Surface Mount	90 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19P06-60L-E3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	175 ░C	2.7 W 46 W	3 V	1710 pF	19 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19N20-90-T4-E3	51 nC	6 V 10 V	TO-252AA	200 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	3 W 136 W	4 V	1800 pF	19 A	Surface Mount	90 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19N20-90-E3	51 nC	6 V 10 V	TO-252AA	200 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	3 W 136 W	4 V	1800 pF	19 A	Surface Mount	90 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SUD19P06-60-E3	40 nC	4.5 V 10 V	TO-252AA	60 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	2.3 W 38.5 W	3 V	1710 pF	18.3 A	Surface Mount	60 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.95
		10	$ 2.45
		100	$ 1.95
		500	$ 1.65
		1000	$ 1.40
	Digi-Reel®	1	$ 2.95
		10	$ 2.45
		100	$ 1.95
		500	$ 1.65
		1000	$ 1.40
	Tape & Reel (TR)	2000	$ 1.24
Newark	Each (Supplied on Full Reel)	2000	$ 1.52
		4000	$ 1.37
		6000	$ 1.32
		10000	$ 1.27

Description

General part information

SUD19 Series

N-Channel 200 V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet