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Discrete Semiconductor Products

APTGT200DH120G

Active
Microchip Technology

1200V/ASYMMETRICAL BRIDGE/IGBT MODULES

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Discrete Semiconductor Products

APTGT200DH120G

Active
Microchip Technology

1200V/ASYMMETRICAL BRIDGE/IGBT MODULES

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTGT200DH120G
ConfigurationAsymmetrical Bridge
Current - Collector (Ic) (Max) [Max]280 A
Current - Collector Cutoff (Max) [Max]350 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce14 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP6
Power - Max [Max]890 W
Supplier Device PackageSP6
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 5$ 262.41
Microchip DirectN/A 1$ 262.41
50$ 217.43
100$ 194.94
250$ 187.44
500$ 164.95
1000$ 149.95
5000$ 131.96

Description

General part information

APTGT200DA60T3AG-Module Series

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