Zenode.ai Logo
Log InSign Up
IXYK1x0xNxxxx
Discrete Semiconductor Products

IXYN100N120B3H1

Active
LITTELFUSE

DISC IGBT XPT-GENX3 SOT-227UI(MINI/ TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsHandling and Mounting Littelfuse miniBLOC - SOT227BDatasheet+1
IXYK1x0xNxxxx
Discrete Semiconductor Products

IXYN100N120B3H1

Active
LITTELFUSE

DISC IGBT XPT-GENX3 SOT-227UI(MINI/ TUBE

Deep-Dive with AI

DocumentsHandling and Mounting Littelfuse miniBLOC - SOT227BDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIXYN100N120B3H1
ConfigurationSingle
Current - Collector (Ic) (Max) [Max]165 A
Current - Collector Cutoff (Max) [Max]50 µA
IGBT TypePT
InputStandard
Input Capacitance (Cies) @ Vce6 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-227-4, miniBLOC
Power - Max [Max]690 W
Supplier Device PackageSOT-227B
Vce(on) (Max) @ Vge, Ic [Max]2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Planar Series

Disc IGBT BiMSFT-VeryHiVolt TO-268AA

PartOperating Temperature [Max]Operating Temperature [Min]Vce(on) (Max) @ Vge, IcCurrent - Collector (Ic) (Max) [Max]Voltage - Collector Emitter Breakdown (Max) [Max]Supplier Device PackageGate ChargePackage / CaseSwitching EnergyTest ConditionCurrent - Collector Pulsed (Icm)Mounting TypePower - Max [Max]Td (on/off) @ 25°CIGBT TypeCurrent - Collector Cutoff (Max) [Max]Vce(on) (Max) @ Vge, Ic [Max]ConfigurationInput Capacitance (Cies) @ VceNTC ThermistorInputTd (on/off) @ 25°C [Min]Td (on/off) @ 25°C [Max]Reverse Recovery Time (trr)
IXYK140N90C3
LITTELFUSE
IXYK140N90C3
175 °C
-55 °C
2.7 V
310 A
900 V
TO-264 (IXYK)
330 nC
TO-264-3
TO-264AA
4 mJ
4.3 mJ
1 Ohm
15 V
100 A
450 V
840 A
Through Hole
1630 W
40 ns
145 ns
IXYK1x0xNxxxx
LITTELFUSE
IXYN100N120B3H1
150 °C
-55 °C
165 A
1200 V
SOT-227B
SOT-227-4
miniBLOC
Chassis Mount
690 W
PT
50 µA
2.6 V
Single
6 nF
Standard
TO-247-AD-EP-(H)
LITTELFUSE
IXXH150N60C3
175 °C
-55 °C
2.5 V
600 V
TO-247AD
200 nC
TO-247-2
1.8 mJ
3.4 mJ
2 Ohm
15 V
75 A
400 V
150 A
Through Hole
1360 W
PT
34 ns
120 ns
IXYK1x0xNxxxx
LITTELFUSE
IXYN120N120C3
175 °C
-55 °C
3.2 V
240 A
1200 V
SOT-227B - miniBLOC
SOT-227-4
miniBLOC
Chassis Mount
25 µA
Single
Standard
Littelfuse Power Semi TO-268 3 1S2C image
LITTELFUSE
IXBT2N250
150 °C
-55 °C
3.5 V
5 A
2500 V
TO-268AA
10.6 nC
D3PAK (2 Leads + Tab)
TO-268-3
TO-268AA
13 A
Surface Mount
32 W
920 ns
IXYY8N90C3
LITTELFUSE
IXYY8N90C3
175 °C
-55 °C
20 A
900 V
TO-252AA
13.3 nC
DPAK (2 Leads + Tab)
SC-63
TO-252-3
180 µJ
460 µJ
8 A
15 V
30 Ohm
450 V
48 A
Surface Mount
16 ns
40 ns
2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 39.351m+
10$ 35.06
100$ 30.77
MouserN/A 1$ 39.651m+
10$ 33.29
30$ 29.38
NewarkEach 250$ 28.511m+

Description

General part information

Planar Series

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements