Discrete Semiconductor Products

IXYN120N120C3

Active

LITTELFUSE

DISC IGBT XPT-GENX3 SOT-227B(MINI/ TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsUR_QQQX2_E153432_20180829 Datasheet +1

Discrete Semiconductor Products

IXYN120N120C3

Active

LITTELFUSE

DISC IGBT XPT-GENX3 SOT-227B(MINI/ TUBE

Deep-Dive with AI

DocumentsUR_QQQX2_E153432_20180829 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXYN120N120C3

Configuration	Single
Current - Collector (Ic) (Max) [Max]	240 A
Current - Collector Cutoff (Max) [Max]	25 µA
Input	Standard
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227B - miniBLOC
Vce(on) (Max) @ Vge, Ic	3.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Planar Series

Disc IGBT BiMSFT-VeryHiVolt TO-268AA

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Package / Case	Switching Energy	Test Condition	Current - Collector Pulsed (Icm)	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C	IGBT Type	Current - Collector Cutoff (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Configuration	Input Capacitance (Cies) @ Vce	Input	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Reverse Recovery Time (trr)
LITTELFUSE IXYK140N90C3	175 °C	-55 °C	2.7 V	310 A	900 V	TO-264 (IXYK)	330 nC	TO-264-3 TO-264AA	4 mJ 4.3 mJ	1 Ohm 15 V 100 A 450 V	840 A	Through Hole	1630 W	40 ns 145 ns
LITTELFUSE IXYN100N120B3H1	150 °C	-55 °C		165 A	1200 V	SOT-227B		SOT-227-4 miniBLOC				Chassis Mount	690 W		PT	50 µA	2.6 V	Single	6 nF	Standard
LITTELFUSE IXXH150N60C3	175 °C	-55 °C	2.5 V		600 V	TO-247AD	200 nC	TO-247-2	1.8 mJ 3.4 mJ	2 Ohm 15 V 75 A 400 V	150 A	Through Hole	1360 W		PT						34 ns	120 ns
LITTELFUSE IXYN120N120C3	175 °C	-55 °C	3.2 V	240 A	1200 V	SOT-227B - miniBLOC		SOT-227-4 miniBLOC				Chassis Mount				25 µA		Single		Standard
LITTELFUSE IXBT2N250	150 °C	-55 °C	3.5 V	5 A	2500 V	TO-268AA	10.6 nC	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			13 A	Surface Mount	32 W										920 ns
LITTELFUSE IXYY8N90C3	175 °C	-55 °C		20 A	900 V	TO-252AA	13.3 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 µJ 460 µJ	8 A 15 V 30 Ohm 450 V	48 A	Surface Mount		16 ns 40 ns			2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tube	1	$ 40.22	1m+
		10	$ 35.84
		100	$ 31.46
Mouser	N/A	1	$ 40.89	1m+
		10	$ 30.55
		100	$ 27.81
Newark	Each	250	$ 29.15	1m+

Description

General part information

Planar Series

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements

Documents

Technical documentation and resources

UR_QQQX2_E153432_20180829

Document

Datasheet

Handling and Mounting Littelfuse miniBLOC - SOT227B

Technical Document