Planar Series

Disc IGBT BiMSFT-VeryHiVolt TO-268AA

Catalog

Disc IGBT BiMSFT-VeryHiVolt TO-268AA

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Package / Case	Switching Energy	Test Condition	Current - Collector Pulsed (Icm)	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C	IGBT Type	Current - Collector Cutoff (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Configuration	Input Capacitance (Cies) @ Vce	Input	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Reverse Recovery Time (trr)
LITTELFUSE IXYK140N90C3	175 °C	-55 °C	2.7 V	310 A	900 V	TO-264 (IXYK)	330 nC	TO-264-3 TO-264AA	4 mJ 4.3 mJ	1 Ohm 15 V 100 A 450 V	840 A	Through Hole	1630 W	40 ns 145 ns
LITTELFUSE IXYN100N120B3H1	150 °C	-55 °C		165 A	1200 V	SOT-227B		SOT-227-4 miniBLOC				Chassis Mount	690 W		PT	50 µA	2.6 V	Single	6 nF	Standard
LITTELFUSE IXXH150N60C3	175 °C	-55 °C	2.5 V		600 V	TO-247AD	200 nC	TO-247-2	1.8 mJ 3.4 mJ	2 Ohm 15 V 75 A 400 V	150 A	Through Hole	1360 W		PT						34 ns	120 ns
LITTELFUSE IXYN120N120C3	175 °C	-55 °C	3.2 V	240 A	1200 V	SOT-227B - miniBLOC		SOT-227-4 miniBLOC				Chassis Mount				25 µA		Single		Standard
LITTELFUSE IXBT2N250	150 °C	-55 °C	3.5 V	5 A	2500 V	TO-268AA	10.6 nC	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			13 A	Surface Mount	32 W										920 ns
LITTELFUSE IXYY8N90C3	175 °C	-55 °C		20 A	900 V	TO-252AA	13.3 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 µJ 460 µJ	8 A 15 V 30 Ohm 450 V	48 A	Surface Mount		16 ns 40 ns			2.5 V

Catalog

Disc IGBT BiMSFT-VeryHiVolt TO-268AA

Description

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements