Discrete Semiconductor Products
BSM600D12P3G001
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 600 A, 1.2 KV, MODULE
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Discrete Semiconductor Products
BSM600D12P3G001
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 600 A, 1.2 KV, MODULE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM600D12P3G001 |
|---|---|
| Configuration | 2 N-Channel (Half Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 600 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Input Capacitance (Ciss) (Max) @ Vds | 31000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 2450 W |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1785.00 | |
Description
General part information
BSM600D12P3G001 Series
BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
Documents
Technical documentation and resources
