Discrete Semiconductor Products
BSM600C12P3G201
NRNDRohm Semiconductor
DISCRETE SEMICONDUCTOR MODULES 1200V VDSS; 576A ID SIC MOD; SICSTD02
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Discrete Semiconductor Products
BSM600C12P3G201
NRNDRohm Semiconductor
DISCRETE SEMICONDUCTOR MODULES 1200V VDSS; 576A ID SIC MOD; SICSTD02
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM600C12P3G201 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 600 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 28000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Power Dissipation (Max) | 2460 W |
| Supplier Device Package | Module |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSM600 Series
N-Channel 1200 V 600A (Tc) 2460W (Tc) Chassis Mount Module
Documents
Technical documentation and resources
