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BSM180C12P2E202
Discrete Semiconductor Products

BSM600C12P3G201

NRND
Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 600 A, 1.2 KV, MODULE

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BSM180C12P2E202
Discrete Semiconductor Products

BSM600C12P3G201

NRND
Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 600 A, 1.2 KV, MODULE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSM600C12P3G201
Current - Continuous Drain (Id) @ 25°C600 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds28000 pF
Mounting TypeChassis Mount
Operating Temperature175 °C
Package / CaseModule
Power Dissipation (Max) [Max]2460 W
Supplier Device PackageModule
Vgs(th) (Max) @ Id5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 4$ 1200.00
NewarkEach 1$ 1248.00

Description

General part information

BSM600D12P3G001 Series

BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

Documents

Technical documentation and resources