BSM600 Series

Catalog

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 600 A, 1.2 KV, MODULE

Part	Configuration	Vgs(th) (Max) @ Id	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Package / Case	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Operating Temperature
Rohm Semiconductor BSM600D12P3G001	2 N-Channel	5.6 V	Chassis Mount	Silicon Carbide (SiC)	600 A	Module	1.2 kV	1200 V	Module	2450 W	31000 pF	-40 °C	150 °C
Rohm Semiconductor BSM600C12P3G201		5.6 V	Chassis Mount		600 A	Module	1.2 kV		Module		28000 pF			2460 W	N-Channel	175 °C