BSM600D12P3G001 Series

1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET

Catalog

1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Power Dissipation (Max) [Max]	Operating Temperature	FET Type
Rohm Semiconductor BSM600D12P3G001	Silicon Carbide (SiC)	31000 pF	5.6 V	Module	150 °C	-40 °C	Module	Chassis Mount	600 A	1200 V	1.2 kV	2 N-Channel (Half Bridge)	2450 W
Rohm Semiconductor BSM600C12P3G201		28000 pF	5.6 V	Module			Module	Chassis Mount	600 A	1200 V				2460 W	175 °C	N-Channel

Catalog

1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET

Key Features

• Low surge, low switching loss., High-speed switching possible., Reduced temperature dependance.

Description

BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.