MSC2X30SDA170J
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL, 1.7 KV, 30 A, 230 NC, SOT-227
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MSC2X30SDA170J
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL, 1.7 KV, 30 A, 230 NC, SOT-227
Technical Specifications
Parameters and characteristics for this part
| Specification | MSC2X30SDA170J |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 30 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Diode Configuration | 2 Independent |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | SOT-227-4, miniBLOC |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | SOT-227 (ISOTOP®) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 20 | $ 78.46 | |
| Microchip Direct | TUBE | 1 | $ 78.46 | |
| 10 | $ 72.35 | |||
| 100 | $ 62.95 | |||
| 500 | $ 58.72 | |||
| Newark | Each | 1 | $ 83.68 | |
| 5 | $ 78.80 | |||
| 10 | $ 73.81 | |||
| 25 | $ 68.00 | |||
| 50 | $ 66.54 | |||
| 100 | $ 62.56 | |||
Description
General part information
MSC2X30SDA120 Series
MSC2X30SDA170 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Documents
Technical documentation and resources
