MSC2X30SDA120 Series

1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Catalog

1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Part	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package
Microchip Technology MSC2X30SDA120J
Microchip Technology MSC2X30SDA170J	No Recovery Time	175 ░C	-55 C	0 ns	2 Independent	1700 V	SiC (Silicon Carbide) Schottky	Chassis Mount	1.8 V	30 A	SOT-227-4 miniBLOC	200 µA	SOT-227 (ISOTOP®)

Catalog

1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Key Features

- No reverse recovery

- Low forward voltage

- Low leakage current

- Avalanche-energy rated

- RoHS compliant

- Isolated voltage to 2500V

Description

MSC2X30SDA170 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.