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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6690 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 hFE |
| Mounting Type | Stud Mount |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -65 ░C |
| Package / Case | Stud, TO-210AC, TO-61-4, TO-211MA |
| Power - Max [Max] | 3 W |
| Supplier Device Package | TO-61 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 654.37 | |
| Microchip Direct | N/A | 1 | $ 704.70 | |
| Newark | Each | 100 | $ 654.37 | |
| 500 | $ 629.20 | |||
Description
General part information
2N6690-Transistor Series
This specification covers the performance requirements for NPN, silicon, power, 2N6674, 2N6675, 2N6689 and 2N6690 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for encapsulated devices as specified in MIL-PRF-19500/537. The device package outlines are a modified TO-204AD (formerly TO-3) for types 2N6674 and 2N6675 or a TO-210AC (formerly TO-61) for types 2N6689 and 2N6690.
Documents
Technical documentation and resources