2N6690-Transistor Series

MIL-PRF-19500/537

Catalog

MIL-PRF-19500/537

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)
Microchip Technology 2N6690	3 W	15 A	TO-61	Stud Mount	5 V	NPN	100 µA	-65 ░C	200 °C	Stud TO-210AC TO-211MA TO-61-4	15 hFE	400 V

Catalog

MIL-PRF-19500/537

Key Features

• undefined

Description

This specification covers the performance requirements for NPN, silicon, power, 2N6674, 2N6675, 2N6689 and 2N6690 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for encapsulated devices as specified in MIL-PRF-19500/537. The device package outlines are a modified TO-204AD (formerly TO-3) for types 2N6674 and 2N6675 or a TO-210AC (formerly TO-61) for types 2N6689 and 2N6690.