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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

NP60N04KUG-E1-AY

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

NP60N04KUG-E1-AY

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNP60N04KUG-E1-AY
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC
Input Capacitance (Ciss) (Max) @ Vds5100 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)88 W, 1.8 W
Rds On (Max) @ Id, Vgs6.1 mOhm
Supplier Device PackageTO-263
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NP Series Series

Power MOSFETs for Automotive

Documents

Technical documentation and resources