
Discrete Semiconductor Products
NP60N04KUG-E1-AY
ObsoleteRenesas Electronics Corporation
POWER MOSFETS FOR AUTOMOTIVE
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DocumentsNP60N04KUG Data Sheet

Discrete Semiconductor Products
NP60N04KUG-E1-AY
ObsoleteRenesas Electronics Corporation
POWER MOSFETS FOR AUTOMOTIVE
Deep-Dive with AI
DocumentsNP60N04KUG Data Sheet
Technical Specifications
Parameters and characteristics for this part
| Specification | NP60N04KUG-E1-AY |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 88 W, 1.8 W |
| Rds On (Max) @ Id, Vgs | 6.1 mOhm |
| Supplier Device Package | TO-263 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NP Series Series
Power MOSFETs for Automotive
Documents
Technical documentation and resources