Zenode.ai Logo
Beta
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

NP80N04KHE-E1-AY

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Deep-Dive with AI

Search across all available documentation for this part.

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

NP80N04KHE-E1-AY

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

SpecificationNP80N04KHE-E1-AY
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds3300 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)1.8 W
Power Dissipation (Max)120 W
Supplier Device PackageTO-263
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NP Series Series

Power MOSFETs for Automotive