Zenode.ai Logo
Beta
No image
Discrete Semiconductor Products

NP88N04NUG-S18-AY

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

NP88N04NUG-S18-AY

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNP88N04NUG-S18-AY
Current - Continuous Drain (Id) @ 25°C88 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds15000 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)1.8 W, 200 W
Rds On (Max) @ Id, Vgs3.4 mOhm
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NP Series Series

Power MOSFETs for Automotive

Documents

Technical documentation and resources