Discrete Semiconductor Products
STQ1HNK60R-AP
ActiveSTMicroelectronics
MOSFETS N-CHANNEL 600 V, 7.3 OHM TYP 1 A SUPERMESH POWERMOSFET IN TO-92 PACKAGE
Discrete Semiconductor Products
STQ1HNK60R-AP
ActiveSTMicroelectronics
MOSFETS N-CHANNEL 600 V, 7.3 OHM TYP 1 A SUPERMESH POWERMOSFET IN TO-92 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STQ1HNK60R-AP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 400 mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 156 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226AA |
| Package / Case | TO-92-3, TO-226-3 |
| Power Dissipation (Max) | 3 W |
| Rds On (Max) @ Id, Vgs | 8.5 Ohm |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 3.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STQ1HNK60R Series
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources