STQ1HNK60R Series

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH PowerMOSFET in TO-92 package

Catalog

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH PowerMOSFET in TO-92 package

Part	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STQ1HNK60R-AP	MOSFET (Metal Oxide)	600 V	156 pF	TO-226AA	TO-226-3 TO-92-3	150 °C	-55 °C	10 V	TO-92-3	8.5 Ohm	30 V	10 nC	3 W	Through Hole	3.7 V	N-Channel	400 mA

Catalog

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH PowerMOSFET in TO-92 package

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.