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RF and Wireless

ADRF5142BCCZN

Active
Analog Devices

HIGH POWER, 40 W PEAK, SILICON SPDT, REFLECTIVE SWITCH, 8 GHZ TO 11 GHZ

RF and Wireless

ADRF5142BCCZN

Active
Analog Devices

HIGH POWER, 40 W PEAK, SILICON SPDT, REFLECTIVE SWITCH, 8 GHZ TO 11 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationADRF5142BCCZN
CircuitSPDT
FeaturesDC Blocked
Frequency Range [Max]11 GHz
Frequency Range [Min]8 GHz
IIP370 dBm
Impedance50 Ohms
Insertion Loss1.2 dB
Isolation40 dB
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case20-VFLGA Exposed Pad
RF TypeRadar
Supplier Device Package20-LGA (3x3)
Test Frequency11 GHz
TopologyReflective
Voltage - Supply [Max]-3.15 V, 3.45 V
Voltage - Supply [Min]-3.45 V, 3.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyStrip 1$ 103.68
10$ 83.58
25$ 78.46
100$ 77.66

Description

General part information

ADRF5142 Series

The ADRF5142 is a reflective single-pole, double-throw (SPDT) switch manufactured in the silicon process.The ADRF5142 operates from 8 GHz to 11 GHz with a 1.2 dB typical insertion loss and a 40 dB typical isolation. The device has a radio frequency (RF) input power handling capability of 41 dBm average power and 46 dBm peak power for the insertion loss path.The ADRF5142 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/lowvoltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5142 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.The ADRF5142 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and operates from −40°C to +85°C.