STD10P6F6
ActiveP-CHANNEL -60 V, 0.13 OHM TYP., -10 A STRIPFET F6 POWER MOSFET IN DPAK PACKAGE
STD10P6F6
ActiveP-CHANNEL -60 V, 0.13 OHM TYP., -10 A STRIPFET F6 POWER MOSFET IN DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD10P6F6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 35 W |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
STD10 Series
P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
| Part | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | MOSFET (Metal Oxide) | P-Channel | 10 A | Surface Mount | 340 pF | 60 V | 20 V | 6.4 nC | 175 °C | 160 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | DPAK | 10 V | 35 W | |||||
 STMicroelectronics | MOSFET (Metal Oxide) | P-Channel | 10 A | Through Hole | 60 V | 20 V | 175 °C | 200 mOhm | IPAK TO-251-3 Short Leads TO-251AA | 4 V | IPAK | 10 V | 40 W | 850 pF | 21 nC | |||||
STMicroelectronics | MOSFET (Metal Oxide) | N-Channel | 8 A | Surface Mount | 650 V | 25 V | 530 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5 V | DPAK | 10 V | 109 W | 529 pF | 15 nC | 150 °C | -55 °C | ||||
STMicroelectronics | MOSFET (Metal Oxide) | P-Channel | 10 A | Surface Mount | 864 pF | 100 V | 20 V | 16.5 nC | 175 °C | 180 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | DPAK | 10 V | 40 W | |||||
STMicroelectronics | MOSFET (Metal Oxide) | N-Channel | Surface Mount | 2060 pF | 30 V | 20 V | 5.5 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1 V | DPAK | 5 V 10 V | 110 W | 27 nC | 175 °C | -55 °C | |||||
 STMicroelectronics | MOSFET (Metal Oxide) | N-Channel | 8 A | Surface Mount | 600 V | 25 V | 20 nC | 600 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5 V | DPAK | 10 V | 577 pF | 150 °C | -55 °C | 70 W | ||||
 STMicroelectronics | MOSFET (Metal Oxide) | N-Channel | 8 A | Surface Mount | 427 pF | 800 V | 30 V | 630 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5 V | TO-252 (DPAK) | 10 V | 110 W | 15 nC | 150 °C | -55 °C | ||||
STMicroelectronics | MOSFET (Metal Oxide) | N-Channel | 60 A | Surface Mount | 3940 pF | 24 V | 20 V | 84 nC | 4.8 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.8 V | DPAK | 5 V 10 V | 100 W | 175 °C | -55 °C | ||||
 STMicroelectronics | MOSFET (Metal Oxide) | N-Channel | 6.4 A | Surface Mount | 338 pF | 600 V | 25 V | 600 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.75 V | TO-252 (DPAK) | 10 V | 60 W | 8.8 nC | 150 °C | -55 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD10 Series
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Documents
Technical documentation and resources