Discrete Semiconductor Products

STD10PF06-1

Obsolete

STMicroelectronics

MOSFET P-CH 60V 10A IPAK

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Discrete Semiconductor Products

STD10PF06-1

Obsolete

STMicroelectronics

MOSFET P-CH 60V 10A IPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD10PF06-1

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STD10 Series

P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package

Part	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]
STMicroelectronics STD10P6F6	MOSFET (Metal Oxide)	P-Channel	10 A	Surface Mount	340 pF	60 V	20 V	6.4 nC	175 °C	160 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	DPAK	10 V	35 W
STMicroelectronics STD10PF06-1	MOSFET (Metal Oxide)	P-Channel	10 A	Through Hole		60 V	20 V		175 °C	200 mOhm	IPAK TO-251-3 Short Leads TO-251AA	4 V	IPAK	10 V	40 W	850 pF	21 nC
STMicroelectronics STD10N60DM2	MOSFET (Metal Oxide)	N-Channel	8 A	Surface Mount		650 V	25 V			530 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	DPAK	10 V	109 W	529 pF	15 nC	150 °C	-55 °C
STMicroelectronics STD10P10F6	MOSFET (Metal Oxide)	P-Channel	10 A	Surface Mount	864 pF	100 V	20 V	16.5 nC	175 °C	180 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	DPAK	10 V	40 W
STMicroelectronics STD100N03LT4	MOSFET (Metal Oxide)	N-Channel		Surface Mount	2060 pF	30 V	20 V			5.5 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 V	DPAK	5 V 10 V	110 W		27 nC	175 °C	-55 °C
STMicroelectronics STD10NM60ND	MOSFET (Metal Oxide)	N-Channel	8 A	Surface Mount		600 V	25 V	20 nC		600 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	DPAK	10 V		577 pF		150 °C	-55 °C	70 W
STMicroelectronics STD10LN80K5	MOSFET (Metal Oxide)	N-Channel	8 A	Surface Mount	427 pF	800 V	30 V			630 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	TO-252 (DPAK)	10 V	110 W		15 nC	150 °C	-55 °C
STMicroelectronics STD100NH02LT4	MOSFET (Metal Oxide)	N-Channel	60 A	Surface Mount	3940 pF	24 V	20 V	84 nC		4.8 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.8 V	DPAK	5 V 10 V	100 W			175 °C	-55 °C
STMicroelectronics STD10N60M6	MOSFET (Metal Oxide)	N-Channel	6.4 A	Surface Mount	338 pF	600 V	25 V			600 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.75 V	TO-252 (DPAK)	10 V	60 W		8.8 nC	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

STD10 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources