2N3501E3
ActiveSMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES
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2N3501E3
ActiveSMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3501E3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 300 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 13.41 | |
| Microchip Direct | N/A | 1 | $ 14.43 | |
| Newark | Each | 100 | $ 13.40 | |
| 500 | $ 12.89 | |||
Description
General part information
2N3501E3-Transistor-RoHS Series
This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors (Commercial version with E3 suffix for RoHS). Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources