2N3501E3-Transistor-RoHS Series

MIL-PRF-19500/366

Catalog

MIL-PRF-19500/366

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]
Microchip Technology 2N3501E3	TO-39 (TO-205AD)	100	300 mA	150 V	NPN	500 mW	TO-205AD TO-39-3 Metal Can	400 mV	Through Hole	10 µA

Catalog

MIL-PRF-19500/366

Key Features

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Description

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors (Commercial version with E3 suffix for RoHS). Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements.