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STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STH22N95K5-2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 950 V, 280 MOHM TYP., 17.5 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

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STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STH22N95K5-2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 950 V, 280 MOHM TYP., 17.5 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTH22N95K5-2AG
Current - Continuous Drain (Id) @ 25°C17.5 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1550 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)250 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs330 mOhm
Supplier Device PackageH2Pak-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 7.55
NewarkEach (Supplied on Cut Tape) 1$ 9.03
10$ 6.72
25$ 6.28
50$ 5.83
100$ 5.39
250$ 5.13
500$ 4.87
1000$ 4.86

Description

General part information

STH22N95K5-2AG Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.