STH22N95K5-2AG Series

Automotive-grade N-channel 950 V, 280 mOhm typ., 17.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Catalog

Automotive-grade N-channel 950 V, 280 mOhm typ., 17.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Part	Grade	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Qualification	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STH22N95K5-2AG	Automotive	330 mOhm	5 V	30 V	AEC-Q101	N-Channel	17.5 A	H2Pak-2	48 nC	MOSFET (Metal Oxide)	1550 pF	250 W	150 °C	-55 °C	950 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V

Catalog

Automotive-grade N-channel 950 V, 280 mOhm typ., 17.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.