Discrete Semiconductor Products

IXTH120N20X4

Active

Littelfuse/Commercial Vehicle Products

DISCRETE MOSFET 120A 200V X4 TO247/ TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IXTH120N20X4

Active

Littelfuse/Commercial Vehicle Products

DISCRETE MOSFET 120A 200V X4 TO247/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH120N20X4

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	108 nC
Input Capacitance (Ciss) (Max) @ Vds	6100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTH120P065T Series

DiscMSFT PChan-Trench Gate TO-247AD

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTH120N20X4	4.5 V	9.5 mOhm	MOSFET (Metal Oxide)	TO-247 (IXTH)	-55 °C	175 ░C	108 nC	200 V	10 V	TO-247-3	417 W	120 A	Through Hole	20 V	N-Channel	6100 pF
Littelfuse/Commercial Vehicle Products IXTH120P065T	4 V		MOSFET (Metal Oxide)	TO-247 (IXTH)	-55 °C	150 °C		65 V	10 V	TO-247-3	298 W	120 A	Through Hole	15 V	P-Channel	13200 pF	10 mOhm	185 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.05
		30	$ 5.63
		120	$ 5.21
Newark	Each	250	$ 5.89
		500	$ 5.47

Description

General part information

IXTH120P065T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Documents

Technical documentation and resources