Discrete Semiconductor Products

IXTH120P065T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 65 V, 120 A, 0.01 OHM, TO-247, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet

Discrete Semiconductor Products

IXTH120P065T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 65 V, 120 A, 0.01 OHM, TO-247, THROUGH HOLE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH120P065T

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	65 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	185 nC
Input Capacitance (Ciss) (Max) @ Vds	13200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs [Max]	10 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

IXTH120P065T Series

DiscMSFT PChan-Trench Gate TO-247AD

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTH120N20X4	4.5 V	9.5 mOhm	MOSFET (Metal Oxide)	TO-247 (IXTH)	-55 °C	175 ░C	108 nC	200 V	10 V	TO-247-3	417 W	120 A	Through Hole	20 V	N-Channel	6100 pF
Littelfuse/Commercial Vehicle Products IXTH120P065T	4 V		MOSFET (Metal Oxide)	TO-247 (IXTH)	-55 °C	150 °C		65 V	10 V	TO-247-3	298 W	120 A	Through Hole	15 V	P-Channel	13200 pF	10 mOhm	185 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.80
		30	$ 6.23
		120	$ 5.57
		510	$ 4.92
		1020	$ 4.43
		2010	$ 4.15
Newark	Each	1	$ 8.03
		25	$ 6.51
		100	$ 5.00
		250	$ 4.42
		500	$ 4.20
		1000	$ 3.98

Description

General part information

IXTH120P065T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet