IXTH120P065T Series

DiscMSFT PChan-Trench Gate TO-247AD

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT PChan-Trench Gate TO-247AD

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTH120N20X4	4.5 V	9.5 mOhm	MOSFET (Metal Oxide)	TO-247 (IXTH)	-55 °C	175 ░C	108 nC	200 V	10 V	TO-247-3	417 W	120 A	Through Hole	20 V	N-Channel	6100 pF
Littelfuse/Commercial Vehicle Products IXTH120P065T	4 V		MOSFET (Metal Oxide)	TO-247 (IXTH)	-55 °C	150 °C		65 V	10 V	TO-247-3	298 W	120 A	Through Hole	15 V	P-Channel	13200 pF	10 mOhm	185 nC

Catalog

DiscMSFT PChan-Trench Gate TO-247AD

Key Features

• The lowest on-state resistance in TO-220 RDS(ON) = 9.5mΩ

• Low thermal resistance RthJC = 0.36 K/W

• Low gate charge Qg = 108nC

• 175°C operating junction temperature

Description

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching