Discrete Semiconductor Products
RGTH60TS65DGC13
ActiveRohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGTH60TS65DGC13
ActiveRohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGTH60TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 58 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 58 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 194 W |
| Reverse Recovery Time (trr) | 58 ns |
| Supplier Device Package | TO-247 |
| Td (on/off) @ 25°C | 27 ns, 105 ns |
| Test Condition | 15 V, 400 V, 30 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.69 | |
| 30 | $ 3.83 | |||
| 120 | $ 3.20 | |||
| 510 | $ 2.73 | |||
| 1020 | $ 2.68 | |||
Description
General part information
RGTH60TS65D Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Documents
Technical documentation and resources