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TO-247N
Discrete Semiconductor Products

RGTH60TS65DGC11

NRND
Rohm Semiconductor

IGBT TRNCH FIELD 650V 58A TO247N

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Search across all available documentation for this part.

TO-247N
Discrete Semiconductor Products

RGTH60TS65DGC11

NRND
Rohm Semiconductor

IGBT TRNCH FIELD 650V 58A TO247N

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRGTH60TS65DGC11
Current - Collector (Ic) (Max) [Max]58 A
Current - Collector Pulsed (Icm)120 A
Gate Charge58 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]194 W
Reverse Recovery Time (trr)58 ns
Supplier Device PackageTO-247N
Td (on/off) @ 25°C [custom]27 ns
Td (on/off) @ 25°C [custom]105 ns
Test Condition30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 424$ 4.71
Tube 1$ 3.61
30$ 2.86
120$ 2.45
510$ 2.18
1020$ 1.87
2010$ 1.76
5010$ 1.69

Description

General part information

RGTH60 Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources