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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FJP13009TU

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 12 A, 100 W, TO-220, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsPackage Drawing-340AT-TO-220-3LDDatasheet+1
INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FJP13009TU

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 12 A, 100 W, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsPackage Drawing-340AT-TO-220-3LDDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationFJP13009TU
Current - Collector (Ic) (Max) [Max]12 A
DC Current Gain (hFE) (Min) @ Ic, Vce8 hFE
Frequency - Transition4 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power - Max [Max]100 W
Supplier Device PackageTO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.08
1$ 1.08
50$ 0.87
50$ 0.87
100$ 0.69
100$ 0.69
500$ 0.58
500$ 0.58
1000$ 0.48
1000$ 0.48
2000$ 0.45
2000$ 0.45
5000$ 0.43
5000$ 0.43
10000$ 0.41
10000$ 0.41
NewarkEach 1000$ 0.67
3000$ 0.64
10000$ 0.61
ON SemiconductorN/A 1$ 0.57

Description

General part information

FJP13009 Series

The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFEbin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.