FJP13009 Series

High-Voltage Fast-Switching NPN Power Transistor

Catalog

High-Voltage Fast-Switching NPN Power Transistor

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FJP13009TU	100 W	12 A	TO-220-3	Through Hole	150 °C	TO-220-3	8 hFE	NPN	3 V	4 MHz	400 V
ON Semiconductor FJP13009H2	100 W	12 A	TO-220-3	Through Hole	150 °C	TO-220-3		NPN	3 V	4 MHz	400 V	15
ON Semiconductor FJP13009TU	100 W	12 A	TO-220-3	Through Hole	150 °C	TO-220-3	8 hFE	NPN	3 V	4 MHz	400 V

Catalog

High-Voltage Fast-Switching NPN Power Transistor

Key Features

• High-Voltage Capability

• High Switching Speed

Description

The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFEbin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.