Discrete Semiconductor Products

FJP13009H2

Obsolete

ON Semiconductor

TRANS NPN 400V 12A TO220-3

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Discrete Semiconductor Products

FJP13009H2

Obsolete

ON Semiconductor

TRANS NPN 400V 12A TO220-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FJP13009H2

Current - Collector (Ic) (Max) [Max]	12 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

FJP13009 Series

High-Voltage Fast-Switching NPN Power Transistor

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FJP13009TU	100 W	12 A	TO-220-3	Through Hole	150 °C	TO-220-3	8 hFE	NPN	3 V	4 MHz	400 V
ON Semiconductor FJP13009H2	100 W	12 A	TO-220-3	Through Hole	150 °C	TO-220-3		NPN	3 V	4 MHz	400 V	15
ON Semiconductor FJP13009TU	100 W	12 A	TO-220-3	Through Hole	150 °C	TO-220-3	8 hFE	NPN	3 V	4 MHz	400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FJP13009 Series

The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFEbin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.

Documents

Technical documentation and resources