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SOT1118
Discrete Semiconductor Products

PBSS4112PAN,115

Active
Nexperia USA Inc.

120 V, 1 A NPN/NPN LOW VCESAT (BISS) TRANSISTOR

SOT1118
Discrete Semiconductor Products

PBSS4112PAN,115

Active
Nexperia USA Inc.

120 V, 1 A NPN/NPN LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4112PAN,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60
Frequency - Transition120 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic0.12 V
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.78
10$ 0.49
100$ 0.31
500$ 0.24
1000$ 0.22
Digi-Reel® 1$ 0.78
10$ 0.49
100$ 0.31
500$ 0.24
1000$ 0.22
N/A 0$ 0.98
Tape & Reel (TR) 3000$ 0.19
6000$ 0.17
9000$ 0.16
15000$ 0.15
21000$ 0.15
30000$ 0.14

Description

General part information

PBSS4112 Series

NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.