Discrete Semiconductor Products

PBSS4112PANP,115

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PBSS4112PANP - 120 V, 1 A NPN/PNP LOW VCESAT (BISS) TRANSISTOR@EN-US DFN 6-PIN

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Discrete Semiconductor Products

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PBSS4112PANP - 120 V, 1 A NPN/PNP LOW VCESAT (BISS) TRANSISTOR@EN-US DFN 6-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4112PANP,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	120 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	510 mW
Qualification	AEC-Q100
Supplier Device Package	6-HUSON (2x2)
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	120 mV
Voltage - Collector Emitter Breakdown (Max)	120 V

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Grade	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type
Freescale Semiconductor - NXP PBSS4112PANP,115	120 mV	100 nA	120 V	120 MHz	Automotive	6-UFDFN Exposed Pad	6-HUSON (2x2)	1 A	510 mW	150 °C	AEC-Q100	60 hFE	Surface Mount	1 NPN 1 PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 120V 1A 120MHz 510mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources