120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
| Part | Current - Collector (Ic) (Max) [Max] | Grade | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Package / Case | Vce Saturation (Max) @ Ib, Ic | Qualification | Mounting Type | Frequency - Transition | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1 A | Automotive | 100 nA | 510 mW | 6-UFDFN Exposed Pad | 0.12 V | AEC-Q100 | Surface Mount | 120 MHz | 1 NPN 1 PNP | 120 V | 150 °C | 6-HUSON (2x2) | 60 |
Nexperia USA Inc. | 1 A | Automotive | 100 nA | 510 mW | 6-UFDFN Exposed Pad | 0.12 V | AEC-Q100 | Surface Mount | 120 MHz | 2 NPN (Dual) | 120 V | 150 °C | 6-HUSON (2x2) | 60 |