STPSC8H065DI
Active650 V, 8 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
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STPSC8H065DI
Active650 V, 8 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC8H065DI |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 80 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220AC ins |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 861 | $ 2.28 | |
Description
General part information
STPSC8H065 Series
This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC8H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
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Technical documentation and resources
