STPSC8H065G-TR
LTBSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 23.5 NC, TO-263 (D2PAK)
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STPSC8H065G-TR
LTBSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 23.5 NC, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC8H065G-TR |
|---|---|
| Capacitance @ Vr, F | 414 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 80 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | D2PAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC8H065 Series
This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC8H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources
