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EVAL-ADUM4221-1EBZ
Development Boards, Kits, Programmers

EVAL-ADUM4221-1EBZ

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Analog Devices

EVALUATION BOARD, ADUM4221-1, HALF-BRIDGE GATE DRIVER, 4 A OUTPUT

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EVAL-ADUM4221-1EBZ
Development Boards, Kits, Programmers

EVAL-ADUM4221-1EBZ

Active
Analog Devices

EVALUATION BOARD, ADUM4221-1, HALF-BRIDGE GATE DRIVER, 4 A OUTPUT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationEVAL-ADUM4221-1EBZ
ContentsBoard(s)
FunctionGate Driver
Supplied ContentsBoard(s)
TypePower Management
Utilized IC / PartADuM4221-1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 67.20
NewarkEach 1$ 70.94

Description

General part information

ADuM4221-1 Series

The ADuM4221/ADuM4221-1/ADuM4221-2are 4 A isolated, half bridge gate drivers that employ the Analog Devices, Inc.,iCoupler®technology to provide independent and isolated high-side and low-side outputs. The ADuM4221/ADuM4221-1/ADuM4221-2 provide 5700 V rms isolation in an increased creepage wide body, 16-lead SOIC_IC. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers.The isolators operate with a logic input voltage ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4221/ADuM4221-1/ADuM4221-2 offer the benefit of true, galvanic isolation between the input and each output.The ADuM4221/ADuM4221-1/ADuM4221-2 each have built in overlap protection and allow dead time adjustment. A single resistor between the dead time pin (DT) and the GND1pin sets the dead time on the secondary side between the high-side and the low-side outputs.An internal thermal shutdown (TSD) sets outputs low if the internal temperature on the ADuM4221/ADuM4221-1/ADuM4221-2 exceeds the TSD temperature. As a result, the ADuM4221/ADuM4221-1/ADuM4221-2 provide reliable control over the switching characteristics of the insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of positive or negative switching voltages.ApplicationsSwitching power suppliesIsolated IGBT/MOSFET gate drivesIndustrial invertersGallium nitride (GaN)/silicon carbide (SiC) compatible1Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.

Documents

Technical documentation and resources