Discrete Semiconductor Products

PMCM4401UNEZ

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PMCM4401UNE - 20 V, N-CHANNEL TRENCH MOSFET@EN-US

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Discrete Semiconductor Products

Active

PMCM4401UNE - 20 V, N-CHANNEL TRENCH MOSFET@EN-US

Technical Specifications

Parameters and characteristics for this part

Specification	PMCM4401UNEZ

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	WLCSP, 4-XFBGA
Supplier Device Package	4-WLCSP (0.78x0.78)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Power Dissipation (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PMCM4401VPEZ	4-WLCSP (0.78x0.78)	900 mV	Surface Mount	10 nC	12 V	4-XFBGA WLCSP	8 V	400 mW	12.5 W	65 mOhm	P-Channel	1.8 V 4.5 V	-55 °C	150 °C	3.9 A	MOSFET (Metal Oxide)
Freescale Semiconductor - NXP PMCM4401UNEZ	4-WLCSP (0.78x0.78)		Surface Mount	6.2 nC	20 V	4-XFBGA WLCSP	8 V				N-Channel	2.5 V 4.5 V			5.4 A	MOSFET (Metal Oxide)	150 °C
Freescale Semiconductor - NXP PMCM4401UPEZ	4-WLCSP (0.78x0.78)	900 mV	Surface Mount	10 nC	20 V	4-XFBGA WLCSP	8 V	400 mW	12.5 W	95 mOhm	P-Channel	1.8 V 4.5 V	-55 °C	150 °C	4 A	MOSFET (Metal Oxide)		420 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 5.4A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

Technical documentation and resources

No documents available