Discrete Semiconductor Products

PMCM4401UNEZ

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MOSFET N-CH 20V 4WLCSP

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Discrete Semiconductor Products

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MOSFET N-CH 20V 4WLCSP

Technical Specifications

Parameters and characteristics for this part

Specification	PMCM4401UNEZ

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	4-XFBGA, WLCSP
Power Dissipation (Max) [Max]	400 mW
Supplier Device Package	4-WLCSP
Supplier Device Package [x]	0.78
Supplier Device Package [y]	0.78
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V

12 V, P-channel Trench MOSFET

Part	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Power Dissipation (Max) [Max]	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
Nexperia USA Inc. PMCM4401VPEZ	4-XFBGA WLCSP	MOSFET (Metal Oxide)	415 pF	12.5 W	400 mW	65 mOhm	3.9 A	10 nC	Surface Mount	900 mV	8 V	1.8 V	4.5 V	150 °C	-55 °C	P-Channel	12 V	4-WLCSP	0.78	0.78
Nexperia USA Inc. PMCM4401UNEZ	4-XFBGA WLCSP	MOSFET (Metal Oxide)					5.4 A	6.2 nC	Surface Mount		8 V	2.5 V	4.5 V			N-Channel	20 V	4-WLCSP	0.78	0.78	400 mW	150 °C
Nexperia USA Inc. PMCM4401UPEZ	4-XFBGA WLCSP	MOSFET (Metal Oxide)		12.5 W	400 mW	95 mOhm	4 A	10 nC	Surface Mount	900 mV	8 V	1.8 V	4.5 V	150 °C	-55 °C	P-Channel	20 V	4-WLCSP	0.78	0.78			420 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Technical documentation and resources